全国统一电话
安世氮化镓场效应晶体管(GaN FET)应用参数
Type number |
Package version |
Package name |
Product status |
Channel type |
Nr of transistors |
VDS [max] (V) |
RDSon [max] @ VGS = 10 V (mΩ) |
RDSon [typ] @ VGS = 10 V (mΩ) |
Tj [max] (°C) |
ID [max] (A) |
ID [max] @ T = 100 °C (A) |
IDM [max] (A) |
QGD [typ] (nC) |
QG(tot) [typ] @ VGS = 10 V (nC) |
Ptot [max] (W) |
Qr [typ] (nC) |
VGSth [typ] (V) |
Automotive qualified |
Ciss [typ] (pF) |
Coss [typ] (pF) |
Rth(j-mb) [max] (K/W) |
CCPAK |
Development |
N |
1 |
650 |
39 |
33 |
175 |
59 |
42 |
237 |
5 |
26 |
300 |
167 |
4 |
N |
1500 |
147 |
0.5 |
||
CCPAK |
Development |
N |
1 |
650 |
39 |
33 |
175 |
60 |
42 |
240 |
5 |
30 |
300 |
112 |
4 |
Y |
1500 |
147 |
0.5 |
||
CCPAK |
Development |
N |
1 |
650 |
39 |
33 |
175 |
60 |
42 |
240 |
15 |
30 |
300 |
150 |
4 |
N |
1500 |
147 |
0.5 |
||
CCPAK |
Development |
N |
1 |
650 |
39 |
33 |
175 |
60 |
42 |
240 |
15 |
30 |
300 |
150 |
4 |
Y |
1500 |
147 |
0.5 |
||
TO-247 |
Production |
N |
1 |
650 |
41 |
35 |
175 |
47.2 |
33.4 |
240 |
5 |
22 |
187 |
150 |
3.9 |
N |
1500 |
147 |
0.8 |
||
TO-247 |
Production |
N |
1 |
650 |
60 |
50 |
175 |
34.5 |
24.4 |
150 |
4 |
15 |
143 |
125 |
3.9 |
N |
1000 |
130 |
1.05 |
安世氮化镓场效应晶体管(GaN FET)封装
扫描二维码 关注微信
