全国统一电话
等级 Grade |
Z级 |
工业级 |
研究级 |
试片级 |
|
直径 Diameter |
50.8 ±0.38 mm, 76.2 ±0.38 mm, 100±0.5 mm, 150±0.25mm |
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厚度 Thickness |
4H-N |
350 μm±25μm |
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4H-SI |
500 μm±25μm |
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晶片方向 Wafer Orientation |
Off axis : 4.0° toward 1120 !±0.5° for 4H-N On axis : <0001>±0.5° for 4H-SI |
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微管密度 Micropipe Density |
≤1 cm-2 |
≤5 cm-2 |
≤15 cm-2 |
≤50 cm-2 |
|
电阻率 Resistivity |
4H-N |
0.015~0.028 Ω·cm |
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6H-N |
0.02~0.1 Ω·cm |
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4/6H-SI |
>1E5 Ω·cm |
(90%) >1E5 Ω·cm |
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主定位边方向 Primary Flat |
{10-10}±5.0° |
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主定位边长度 Primary Flat Length |
15.9 mm±1.7 mm, 22.2 mm±3.2 mm, 32.5 mm±2.0 mm, 47.5 mm±2.5 mm |
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次定位边长度 Secondary Flat Length |
8.0 mm±1.7 mm, 11.2 mm±1.5 mm, 18.0mm±2.0 mm, -----, |
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次定位边方向 Secondary Flat Orientation |
Silicon face up: 90° CW. from Prime flat ±5.0° |
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边缘 Edge exclusion |
3 mm |
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总厚度变化/弯曲度/翘曲度 TTV/Bow /Warp |
≤15μm /≤25μm /≤40μm |
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表面粗糙度 Roughness |
Polish Ra≤1 nm |
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CMP Ra≤0.5 nm |
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裂纹(强光灯观测) |
None |
None |
1 allowed, ≤1 mm |
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六方空洞(强光灯观测) |
Cumulative area≤1 % |
Cumulative area≤1 % |
Cumulative area≤3 % |
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多型(强光灯观测) |
None |
Cumulative area≤2 % |
Cumulative area≤5% |
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划痕(强光灯观测) |
3 scratches to 1× wafer diameter |
5 scratches to 1× wafer diameter |
8 scratches to 1× wafer diameter |
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崩边 Edge chip |
None |
3 allowed, ≤0.5 mm each |
5 allowed, ≤1 mm each |
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表面污染物(强光灯观测) |
None |
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