GaN/ Al₂O₃ Substrates (4") 4英寸氮化镓复合衬底 |
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Item 产品型号 |
Un-doped |
N-type |
High-doped N-type |
Size 尺寸 (mm) |
Φ100.0±0.5 (4") |
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Substrate Structure衬底结构 |
GaN on Sapphire(0001) |
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SurfaceFinished 表面处理 |
(Standard: SSP Option: DSP) |
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Thickness 厚度(μm) |
4.5±0.5; 20±2;Customized |
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Conduction Type 导电类型 |
Un-doped |
N-type |
High-doped N-type |
Resistivity 电阻率 (Ω·cm）(300K) |
≤0.5 |
≤0.05 |
≤0.01 |
GaN Thickness Uniformity |
≤±10% (4") |
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Dislocation Density (cm-2) |
≤5×108 |
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有效面积 Useable Surface Area |
＞90% |
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Package 包装 |
Packaged in a class 100 clean room environment. |
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