Czochralski |
Float Zone |
Float Zone |
|
Diameter |
100-150 mm |
50-150 mm* |
100-150 mm* |
Crystal orientation |
<100> <111> |
<100> <111> |
<100> <111> |
Orientation accuracy |
<0.5° |
<0.5° |
<0.5° |
Type and dopant |
Undoped, n-type, |
Undoped, n-type, |
Undoped, n-type, |
Dopant |
As, B, P, and Sb |
P, B |
P, B |
Bulk resistivity |
0.001-60 |
1-30,000 |
1-30,000 |
Bulk lifetime |
>20 µs |
>1,000 µs |
>1,000 µs |
Wafer thickness |
200-1,500 µm |
200-1,500 µm |
200-1,500 µm |
Wafer thickness |
±15 µm |
±15 µm |
±5 µm |
TTV |
<5 µm or <9 µm |
<5 µm or <9 µm |
<2.5 µm |
TIR |
<3 µm |
<3 µm |
<1 µm |
Wafer surface finish |
Single side polished, |
Single side |
Double side |